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器件3D模型￥ 35.653
HFA3127B 数据手册 - Intersil（英特矽尔）
制造商:
Intersil（英特矽尔）
分类:
双极性晶体管
封装:
SOIC-16
描述:
超高频晶体管阵列 Ultra High Frequency Transistor Arrays
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HFA3127B数据手册
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3
FN3076.15
August 11, 2015
Absolute Maximum Ratings Thermal Information
Collector to Emitter Voltage (Open Base) . . . . . . . . . . . . . . . . . . 8V
Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . 12V
Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 5.5V
Collector Current (100% Duty Cycle) . . . . . 18.5mA at T
J
= +150°C
34mA at T
J
= +125°C
37mA at T
J
= +110°C
Peak Collector Current (Any Condition). . . . . . . . . . . . . . . . . . 65mA
Operating Information
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Thermal Resistance (Typical)
JA
(°C/W)
JC
(°C/W)
14 Ld SOIC Package (Note 1) . . . . . . . 120 N/A
16 Ld SOIC Package (Note 1) . . . . . . . 115 N/A
QFN Package (Notes 2, 3). . . . . . . . . . 57 10
Maximum Power Dissipation (Any One Transistor) . . . . . . . . 0.15W
Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . +175°C
Maximum Junction Temperature (Plastic Package) . . . . . . +150°C
Maximum Storage Temperature Range . . . . . . . . . -65°C to +150°C
Pb-Free Reflow Profilesee link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1.
JA
is measured with the component mounted on an evaluation PC board in free air.
2. For
JC
, the “case temp” location is the center of the exposed metal pad on the package underside.
3.
JA
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
Electrical Specifications T
A
= +25°C
PARAMETER TEST CONDITIONS
DIE SOIC, QFN
UNITSMIN TYP MAX MIN TYP MAX
DC NPN CHARACTERISTICS
Collector to Base Breakdown
Voltage, V
(BR)CBO
I
C
= 100µA, I
E
= 0 12 18 - 12 18 - V
Collector to Emitter Breakdown
Voltage, V
(BR)CEO
I
C
= 100µA, I
B
= 0 8 12 - 8 12 - V
Collector to Emitter Breakdown
Voltage, V
(BR)CES
I
C
= 100µA, Base Shorted to Emitter 10 20 - 10 20 - V
Emitter to Base Breakdown
Voltage, V
(BR)EBO
I
E
= 10µA, I
C
= 0 5.5 6 - 5.5 6 - V
Collector-Cutoff-Current, I
CEO
V
CE
= 6V, I
B
= 0 - 2 100 - 2 100 nA
Collector-Cutoff-Current, I
CBO
V
CB
= 8V, I
E
= 0 - 0.1 10 - 0.1 10 nA
Collector to Emitter Saturation
Voltage, V
CE(SAT)
I
C
= 10mA, I
B
= 1mA - 0.3 0.5 - 0.3 0.5 V
Base to Emitter Voltage, V
BE
I
C
= 10mA - 0.85 0.95 - 0.85 0.95 V
DC Forward-Current Transfer
Ratio, h
FE
I
C
= 10mA, V
CE
= 2V 40 130 - 40 130 -
Early Voltage, V
A
I
C
= 1mA, V
CE
= 3.5V 20 50 - 20 50 - V
Base to Emitter Voltage Drift I
C
= 10mA - -1.5 - - -1.5 - mV/°C
Collector to Collector Leakage - 1 - - 1 - pA
Electrical Specifications T
A
= +25°C
PARAMETER TEST CONDITIONS
DIE SOIC, QFN
UNITSMIN TYP MAX MIN TYP MAX
DYNAMIC NPN CHARACTERISTICS
Noise Figure f = 1.0GHz, V
CE
= 5V,
I
C
= 5mA, Z
S
= 50
- 3.5 - - 3.5 - dB
f
T
Current Gain-Bandwidth
Product
I
C
= 1mA, V
CE
= 5V - 5.5 - - 5.5 - GHz
I
C
= 10mA, V
CE
= 5V - 8 - - 8 - GHz
HFA3046, HFA3096, HFA3127, HFA3128
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