Datasheet 搜索 > 双极性晶体管 > Intersil（英特矽尔） > HFA3127B 数据手册 > HFA3127B 数据手册 4/14 页
器件3D模型￥ 35.653
HFA3127B 数据手册 - Intersil（英特矽尔）
制造商:
Intersil（英特矽尔）
分类:
双极性晶体管
封装:
SOIC-16
描述:
超高频晶体管阵列 Ultra High Frequency Transistor Arrays
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
导航目录
HFA3127B数据手册
Page:
of 14 Go
若手册格式错乱，请下载阅览PDF原文件
4
FN3076.15
August 11, 2015
Power Gain-Bandwidth Product,
f
MAX
I
C
= 10mA, V
CE
= 5V - 6 - - 2.5 - GHz
Base to Emitter Capacitance V
BE
= -3V - 200 - - 500 - fF
Collector to Base Capacitance V
CB
= 3V - 200 - - 500 - fF
Electrical Specifications T
A
= +25°C (Continued)
PARAMETER TEST CONDITIONS
DIE SOIC, QFN
UNITSMIN TYP MAX MIN TYP MAX
Electrical Specifications T
A
= +25°C
PARAMETER TEST CONDITIONS
DIE SOIC, QFN
UNITSMIN TYP MAX MIN TYP MAX
DC PNP CHARACTERISTICS
Collector to Base Breakdown
Voltage, V
(BR)CBO
I
C
= -100µA, I
E
= 0 10 15 - 10 15 - V
Collector to Emitter Breakdown
Voltage, V
(BR)CEO
I
C
= -100µA, I
B
= 0 8 15 - 8 15 - V
Collector to Emitter Breakdown
Voltage, V
(BR)CES
I
C
= -100µA, Base Shorted to Emitter 10 15 - 10 15 - V
Emitter to Base Breakdown
Voltage, V
(BR)EBO
I
E
= -10µA, I
C
= 0 4.5 5 - 4.5 5 - V
Collector Cutoff Current, I
CEO
V
CE
= -6V, I
B
= 0 - 2 100 - 2 100 nA
Collector Cutoff Current, I
CBO
V
CB
= -8V, I
E
= 0 - 0.1 10 - 0.1 10 nA
Collector to Emitter Saturation
Voltage, V
CE(SAT)
I
C
= -10mA, I
B
= -1mA - 0.3 0.5 - 0.3 0.5 V
Base to Emitter Voltage, V
BE
I
C
= -10mA - 0.85 0.95 - 0.85 0.95 V
DC Forward-Current Transfer
Ratio, h
FE
I
C
= -10mA, V
CE
= -2V 20 60 - 20 60 -
Early Voltage, V
A
I
C
= -1mA, V
CE
= -3.5V 10 20 - 10 20 - V
Base to Emitter Voltage Drift I
C
= -10mA - -1.5 - - -1.5 - mV/°C
Collector to Collector Leakage - 1 - - 1 - pA
Electrical Specifications T
A
= +25°C
PARAMETER TEST CONDITIONS
DIE SOIC, QFN
UNITSMIN TYP MAX MIN TYP MAX
DYNAMIC PNP CHARACTERISTICS
Noise Figure f = 1.0GHz, V
CE
= -5V,
I
C
= -5mA, Z
S
= 50
- 3.5 - - 3.5 - dB
f
T
Current Gain-Bandwidth
Product
I
C
= -1mA, V
CE
= -5V - 2 - - 2 - GHz
I
C
= -10mA, V
CE
= -5V - 5.5 - - 5.5 - GHz
Power Gain-Bandwidth
Product
I
C
= -10mA, V
CE
= -5V - 3 - - 2 - GHz
Base to Emitter Capacitance V
BE
= 3V - 200 - - 500 - fF
Collector to Base Capacitance V
CB
= -3V - 300 - - 600 - fF
HFA3046, HFA3096, HFA3127, HFA3128
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
