Datasheet 搜索 > IGBT晶体管 > Infineon（英飞凌） > IGB03N120H2 数据手册 > IGB03N120H2 数据手册 2/12 页
￥ 22.794
IGB03N120H2 数据手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
分类:
IGBT晶体管
封装:
TO-263-3
描述:
INFINEON IGB03N120H2 单晶体管, IGBT, 3 A, 2.8 V, 62.5 W, 1.2 kV, TO-263, 3 引脚
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
标记信息在P1
导航目录
IGB03N120H2数据手册
Page:
of 12 Go
若手册格式错乱，请下载阅览PDF原文件
IGB03N120H2
Power Semiconductors
2 Rev. 2.4 Oct. 07
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,
junction – case
R
thJC
2.0
Thermal resistance,
junction – ambient
1)
R
thJA
40
K/W
Electrical Characteristic, at T
j
= 25 °C, unless otherwise specified
Value
Parameter Symbol Conditions
min. Typ. max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
=0V, I
C
=300µA
1200 - -
Collector-emitter saturation voltage
V
CE(sat)
V
GE
= 15V, I
C
=3A
T
j
=25°C
T
j
=150°C
V
GE
= 10V, I
C
=3A,
T
j
=25°C
-
-
-
2.2
2.5
2.4
2.8
-
-
Gate-emitter threshold voltage
V
GE(th)
I
C
=90µA,V
CE
=V
GE
2.1 3 3.9
V
Zero gate voltage collector current
I
CES
V
CE
=1200V,V
GE
=0V
T
j
=25°C
T
j
=150°C
-
-
-
-
20
80
µA
Gate-emitter leakage current
I
GES
V
CE
=0V,V
GE
=20V
- - 100 nA
Transconductance
g
fs
V
CE
=20V, I
C
=3A
- 2 - S
Dynamic Characteristic
Input capacitance
C
iss
- 205 -
Output capacitance
C
oss
- 24 -
Reverse transfer capacitance
C
rss
V
CE
=25V,
V
GE
=0V,
f=1MHz
- 7 -
pF
Gate charge
Q
Gate
V
CC
=960V, I
C
=3A
V
GE
=15V
- 22 - nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
L
E
-
7 -
nH
1)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
