Datasheet 搜索 > IGBT晶体管 > Infineon（英飞凌） > IGB03N120H2 数据手册 > IGB03N120H2 数据手册 3/12 页
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IGB03N120H2 数据手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
分类:
IGBT晶体管
封装:
TO-263-3
描述:
INFINEON IGB03N120H2 单晶体管, IGBT, 3 A, 2.8 V, 62.5 W, 1.2 kV, TO-263, 3 引脚
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IGB03N120H2数据手册
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IGB03N120H2
Power Semiconductors
3 Rev. 2.4 Oct. 07
Switching Characteristic, Inductive Load, at T
j
=25 °C
Value
Parameter Symbol Conditions
min. typ. max.
Unit
IGBT Characteristic
Turn-on delay time
t
d(on)
- 9.2 -
Rise time
t
r
- 5.2 -
Turn-off delay time
t
d(off)
- 281 -
Fall time
t
f
- 29 -
ns
Turn-on energy
E
on
- 0.14 -
Turn-off energy
E
off
- 0.15 -
Total switching energy
E
ts
T
j
=25°C,
V
CC
=800V,I
C
=3A,
V
GE
=15V/0V,
R
G
=82Ω,
L
σ
2)
=180nH,
C
σ
2)
=40pF
Energy losses include
“tail” and diode
4)
reverse recovery.
- 0.29 -
mJ
Switching Characteristic, Inductive Load, at T
j
=150 °C
Value
Parameter Symbol Conditions
min. typ. max.
Unit
IGBT Characteristic
Turn-on delay time
t
d(on)
- 9.4 -
Rise time
t
r
- 6.7 -
Turn-off delay time
t
d(off)
- 340 -
Fall time
t
f
- 63 -
ns
Turn-on energy
E
on
- 0.22 -
Turn-off energy
E
off
- 0.26 -
Total switching energy
E
ts
T
j
=150°C
V
CC
=800V,
I
C
=3A,
V
GE
=15V/0V,
R
G
=82Ω,
L
σ
2)
=180nH,
C
σ
2)
=40pF
Energy losses include
“tail” and diode
3)
reverse recovery.
- 0.48 -
mJ
Switching Energy ZVT, Inductive Load
Value
Parameter Symbol Conditions
min. typ. max.
Unit
IGBT Characteristic
Turn-off energy
E
off
V
CC
=800V,
I
C
=3A,
V
GE
=15V/0V,
R
G
=82Ω,
C
r
2)
=4nF
T
j
=25°C
T
j
=150°C
-
-
0.05
0.09
-
-
mJ
2)
Leakage inductance L
σ
and stray capacity C
σ
due to dynamic test circuit in figure E
4)
Commutation diode from device IKP03N120H2
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