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IRF3808S 数据手册 - Infineon（英飞凌）
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Infineon（英飞凌）
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TO-263
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IRF3808S数据手册
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AUIRF3808S
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Features
Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this Stripe Planar design of
HEXFET® Power MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This benefit combined with the
fast switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and a wide variety of other
applications.
1 2015-11-13
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
HEXFET
®
Power MOSFET
V
DSS
75V
R
DS(on)
typ.
5.9m
I
D
106A
max.
7.0m
D
2
Pak
AUIRF3808S
S
D
G
G D S
Gate Drain Source
Base part number Package Type
Standard Pack
Orderable Part Number
Form Quantity
AUIRF3808S D
2
-Pak
Tube 50 AUIRF3808S
Tape and Reel Left 800 AUIRF3808STRL
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 106
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 75
I
DM
Pulsed Drain Current 550
P
D
@T
C
= 25°C Maximum Power Dissipation 200
W
Linear Derating Factor 1.3 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 430
mJ
I
AR
Avalanche Current 82 A
E
AR
Repetitive Avalanche Energy See Fig. 12a, 12b, 15, 16 mJ
dv/dt Peak Diode Recovery 5.5 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 0.75
°C/W
R
JA
Junction-to-Ambient ( PCB Mount, steady state) 40
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