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IRFP140 数据手册 - Intersil(英特矽尔)
制造商:
Intersil(英特矽尔)
封装:
TO-247
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
封装尺寸在P8
标记信息在P8
技术参数、封装参数在P1
电气规格在P2
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IRFP140数据手册
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IRFP140N
4 www.irf.com
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
400
800
1200
1600
2000
2400
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Volta
g
e
(
V
)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0 20 40 60 80 100
Q , Total Gate Char
g
e
(
nC
)
G
V , Gate-to-Source Voltage (V)
GS
V = 80V
V = 50V
V = 20V
DS
DS
DS
A
FOR TEST CIRCUIT
SEE FIGURE 13
I = 16A
D
10
100
1000
0.4 0.8 1.2 1.6 2.0
T = 25°C
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
A
T = 175°C
J
1
10
100
1000
1 10 100 1000
V , Drain-to-Source Volta
g
e
(
V
)
DS
I , Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
10µs
100µs
1ms
10ms
A
T = 25°C
T = 175°C
Sin
g
le Pulse
C
J
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