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IRFP140 数据手册 - Intersil（英特矽尔）
制造商:
Intersil（英特矽尔）
封装:
TO-247
Pictures:
3D模型
符号图
焊盘图
引脚图
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IRFP140数据手册
Page:
of 9 Go
若手册格式错乱，请下载阅览PDF原文件
IRFP140N
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 100 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.052 Ω V
GS
= 10V, I
D
= 16A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 11 ––– ––– S V
DS
= 50V, I
D
= 16A
––– ––– 25 V
DS
= 100V, V
GS
= 0V
––– ––– 250 V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -100 V
GS
= -20V
Q
g
Total Gate Charge ––– ––– 94 I
D
= 16A
Q
gs
Gate-to-Source Charge ––– ––– 15 nC V
DS
= 80V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 43 V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time ––– 8.2 ––– V
DD
= 50V
t
r
Rise Time ––– 39 ––– I
D
= 16A
t
d(off)
Turn-Off Delay Time ––– 44 ––– R
G
= 5.1Ω
t
f
Fall Time ––– 33 ––– R
D
= 3.0Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance ––– 1400 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 330 ––– pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 170 ––– ƒ = 1.0MHz, See Fig. 5
nH
µA
nA
I
DSS
Drain-to-Source Leakage Current
I
GSS
L
S
Internal Source Inductance ––– –––
ns
S
D
G
5.0
13
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
–––
L
D
Internal Drain Inductance
–––
–––
–––
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤ 16A, di/dt ≤ 210A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%. V
DD
= 25V, starting T
J
= 25°C, L = 2.0mH
R
G
= 25Ω, I
AS
= 16A. (See Figure 12)
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C, I
S
= 16A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 170 250 ns T
J
= 25°C, I
F
= 16A
Q
rr
Reverse RecoveryCharge ––– 1.1 1.6 µC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
A
––– ––– 110
––– ––– 33
S
D
G
Uses IRF540N data and test conditions.
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