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MCR12DSNT4数据手册
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3
Motorola Thyristor Device Data
180
°
90
°
Figure 1. Average Current Derating Figure 2. On–State Power Dissipation
Figure 3. On–State Characteristics Figure 4. Transient Thermal Response
Figure 5. Typical Gate Trigger Current versus
Junction Temperature
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
8.00
I
T(AV)
, AVERAGE ON–STATE CURRENT (AMPS)
110
105
100
I
T(AV)
, AVERAGE ON–STATE CURRENT (AMPS)
3.0 8.00
8.0
4.0
2.0
0
5.00
V
T
, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)
100
10
1.0
0.1
t, TIME (ms)
1.00.1
1.0
0.1
0.01
4.0
–25 20–40
T
J
, JUNCTION TEMPERATURE (
°
C)
1000
10
T
J
, JUNCTION TEMPERATURE (
°
C)
–25 65–40
0.1
205.0
T
C
, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)
P
I
r
(t)
, TRANSIENT THERMAL RESISTANCE
95
85
1.0 2.0 3.0 1.0 2.0
6.0
10
16
1.0 3.0 10 100 1000 10 K
, GATE TRIGGER CURRENT ( A)I
GT
50 11065 5.0 11035 50
V
GT
, GATE TRIGGER VOLTAGE (VOLTS)
°
, AVERAGE POWER DISSIPATION (WATTS)
(AV)
, INSTANTANEOUS ON–STATE CURRENT (AMPS)
T
80
dc
180
°
120
°
90
°
60
°
a
= 30
°
dc
120
°
60
°
TYPICAL @ T
J
= 25
°
C
MAXIMUM @ T
J
= 25
°
C
MAXIMUM @ T
J
= 110
°
C
Z
q
JC(t)
= R
q
JC(t)
S
r(t)
a
= 30
°
1.0
1.0
5.0
2.0
–10
35
95
100
–10 9580
m
4.0 5.0
90
4.0
(NORMALIZED)
GATE OPEN
R
GK
= 1.0 K
W
a
a
= Conduction
Angle
a
a
= Conduction
Angle
80
70
75
6.0 7.0
12
14
6.0
7.0
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