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MCR12DSNT4数据手册
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4 Motorola Thyristor Device Data
Figure 7. Typical Holding Current versus
Junction Temperature
Figure 8. Typical Latching Current versus
Junction Temperature
Figure 9. Holding Current versus
Gate–Cathode Resistance
65 110–40
T
J
, JUNCTION TEMPERATURE (
°
C) T
J
, JUNCTION TEMPERATURE (
°
C)
1000 10 K100
R
GK
, GATE–CATHODE RESISTANCE (OHMS)
10
6.0
4.0
2.0
0
I
H
, HOLDING CURRENT (mA)
I
I
1.0
0.1
–25 5.0 20 50 95
, LATCHING CURRENT (mA)
L
10
T
J
= 25
°
C
–10 35 80
Figure 10. Exponential Static dv/dt versus
Gate–Cathode Resistance and Junction
Temperature
100
R
GK
, GATE–CATHODE RESISTANCE (OHMS)
1000
10
1.0
STATIC dv/dt (V/ s)
m
T
J
= 110
°
C
1000
I
GT
= 10
m
A
R
GK
= 1.0 K
W
65 110–40
1.0
0.1
–25 5.0 20 50 95
10
–10 35 80
R
GK
= 1.0 K
W
Figure 11. Exponential Static dv/dt versus
Gate–Cathode Resistance and Peak Voltage
STATIC dv/dt (V/ s)
m
Figure 12. Exponential Static dv/dt versus
Gate–Cathode Resistance and Gate Trigger
Current Sensitivity
8.0
I
GT
= 25
m
A
, HOLDING CURRENT (mA)
H
100
90
°
C
70
°
C
100
R
GK
, GATE–CATHODE RESISTANCE (OHMS)
1000
10
1.0
T
J
= 110
°
C
1000
100
V
PK
= 800 V
600 V
400 V
100
R
GK
, GATE–CATHODE RESISTANCE (OHMS)
1000
10
1.0
V
D
= 800 V
T
J
= 110
°
C
1000
100
I
GT
= 10
m
A
STATIC dv/dt (V/ s)
m
I
GT
= 25
m
A
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