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S29GL032N90TFI040
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S29GL032N90TFI040数据手册
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Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600
Document Number: 001-98525 Rev. *A Revised October 16, 2015
S29GL064N, S29GL032N
64 Mbit, 32 Mbit 3 V Page Mode
MirrorBit Flash
Distinctive Characteristics
Architectural Advantages
Single power supply operation
Manufactured on 110 nm MirrorBit process technology
Secured SiliconSector region
128-word/256-byte sector for permanent, secure identification
through an 8-word/16-byte random Electronic Serial Number,
accessible through a command sequence
Programmed and locked at the factory or by the customer
Flexible sector architecture
64Mb (uniform sector models): One hundred twenty-eight 32
Kword (64 KB) sectors
64 Mb (boot sector models): One hundred twenty-seven 32 Kword
(64 KB) sectors + eight 4Kword (8KB) boot sectors
32 Mb (uniform sector models): Sixty-four 32Kword (64 KB)
sectors
32 Mb (boot sector models): Sixty-three 32Kword (64 KB) sectors
+ eight 4Kword (8KB) boot sectors
Enhanced VersatileI/O
Control
All input levels (address, control, and DQ input levels) and outputs
are determined by voltage on V
IO
input. V
IO
range is 1.65 to V
CC
Compatibility with JEDEC standards
Provides pinout and software compatibility for single-power supply
flash, and superior inadvertent write protection
100,000 erase cycles typical per sector
20-year data retention typical
Performance Characteristics
High performance
90 ns access time
8-word/16-byte page read buffer
25 ns page read time
16-word/32-byte write buffer which reduces overall programming
time for multiple-word updates
Low power consumption
25 mA typical initial read current,
1 mA typical page read current
50 mA typical erase/program current
1 µA typical standby mode current
Package options
48-pin TSOP
56-pin TSOP
64-ball Fortified BGA
48-ball fine-pitch BGA
Software & Hardware Features
Software features
Advanced Sector Protection: offers Persistent Sector Protection
and Password Sector Protection
Program Suspend & Resume: read other sectors before
programming operation is completed
Erase Suspend & Resume: read/program other sectors before an
erase operation is completed
Data# polling & toggle bits provide status
CFI (Common Flash Interface) compliant: allows host system to
identify and accommodate multiple flash devices
Unlock Bypass Program command reduces overall multiple-word
programming time
Hardware features
WP#/ACC input accelerates programming time (when high voltage
is applied) for greater throughput during system production.
Protects first or last sector regardless of sector protection settings
on uniform sector models
Hardware reset input (RESET#) resets device
Ready/Busy# output (RY/BY#) detects program or erase cycle

S29GL032N90TFI040 数据手册

Spansion(飞索半导体)
83 页 / 1.02 MByte
Spansion(飞索半导体)
83 页 / 1.02 MByte

S29GL032N90 数据手册

Spansion(飞索半导体)
SPANSION  S29GL032N90TFI040  闪存, 32 Mbit, 4M x 8位 / 2M x 16位, CFI, TSOP, 48 引脚
Cypress Semiconductor(赛普拉斯)
GL-N 系列 32 M (4 M x 8/2 M x 16) 3.6 V 页面模式 闪存 - TSOP-8
Cypress Semiconductor(赛普拉斯)
GL-N 系列 32 M (4 M x 8/2 M x 16) 3.6 V 页面模式 闪存 - TSOP-8
Cypress Semiconductor(赛普拉斯)
S29GL03N 系列 32 Mb (4M x 8, 2M x 16) 3 V 90 ns 闪存-NOR 存储器 - BGA-48
Cypress Semiconductor(赛普拉斯)
GL-N 系列 32 M (4M x 8, 2M x 16) 3.6 V 表面贴装 闪存 - TSOP-56
Spansion(飞索半导体)
SPANSION  S29GL032N90BFI040  芯片, 闪存存储器, 32MB, 90NS, 48-BGA
Cypress Semiconductor(赛普拉斯)
闪存, MirrorBit架构, 并行NOR, 32 Mbit, 4M x 8位, CFI, 并行, FBGA, 64 引脚
Spansion(飞索半导体)
SPANSION  S29GL032N90TFI030.  芯片, 闪存, MIRRORBIT
Cypress Semiconductor(赛普拉斯)
闪存, 并行NOR, 32 Mbit, 4M x 8位, 并行, BGA, 64 引脚
Cypress Semiconductor(赛普拉斯)
闪存, MirrorBit架构, 并行NOR, 32 Mbit, 4M x 8位, CFI, 并行, TSOP, 56 引脚
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