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器件3D模型￥ 12.247
SI4421DY-T1-E3 数据手册 - VISHAY（威世）
制造商:
VISHAY（威世）
分类:
MOS管
封装:
SOIC-8
描述:
SI4421DY-T1-E3 编带
Pictures:
3D模型
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SI4421DY-T1-E3数据手册
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2
Document Number: 72114
S-82282-Rev. C, 22-Sep-08
Vishay Siliconix
Si4421DY
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= - 850 µA
- 0.4 - 0.8 V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 8 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 20 V, V
GS
= 0 V
- 1
µA
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 70 °C
- 10
On-State Drain Current
a
I
D(on)
V
DS
= - 5 V, V
GS
= - 4.5 V
- 30 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 4.5 V, I
D
= - 14 A
0.007 0.00875
Ω
V
GS
= - 2.5 V, I
D
= - 12 A
0.0085 0.01075
V
GS
= - 1.8 V, I
D
= - 11 A
0.011 0.0135
Forward Transconductance
a
g
fs
V
DS
= - 10 V, I
D
= - 14 A
55 S
Diode Forward Voltage
a
V
SD
I
S
= - 2.7 A, V
GS
= 0 V
- 0.6 - 1.1 V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 14 A
82 125
nCGate-Source Charge
Q
gs
10
Gate-Drain Charge
Q
gd
27
Gate Resistance
R
g
3 Ω
Tur n - O n D e l ay Time
t
d(on)
V
DD
= - 10 V, R
L
= 10 Ω
I
D
≅ - 1 A, V
GEN
= - 4.5 V, R
G
= 6 Ω
45 70
ns
Rise Time
t
r
90 140
Turn-Off Delay Time
t
d(off)
350 550
Fall Time
t
f
170 260
Source-Drain Reverse Recovery
Time
t
rr
I
F
= - 2.1 A, dI/dt = 100 A/µs
135 210
Output Characteristics
0
8
16
24
32
40
012345
V
GS
= 5 thru 2 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
1.5 V
Transfer Characteristics
0
8
16
24
32
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75
T
C
= 125 °C
- 55 °C
25 °C
V
GS
- Gate-to-Source V oltage (V)
- Drain Current (A) I
D
40
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