Datasheet 搜索 > 齐纳二极管 > VISHAY（威世） > BZD27C51P-GS08 数据手册 > BZD27C51P-GS08 产品手册 1/7 页
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BZD27C51P-GS08 产品手册 - VISHAY（威世）
制造商:
VISHAY（威世）
分类:
齐纳二极管
封装:
DO-219AB
描述:
齐纳二极管与浪涌电流规格 Zener Diodes with Surge Current Specification
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BZD27C51P-GS08数据手册
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of 7 Go
若手册格式错乱，请下载阅览PDF原文件
BZD27C3V6P to BZD27C200P
Document Number 85810
Rev. 1.8, 13-Apr-05
Vishay Semiconductors
www.vishay.com
1
17249
Zener Diodes with Surge Current Specification
Features
• Sillicon Planar Zener Diodes
• Low profile surface-mount package
• Zener and surge current specification
• Low leakage current
• Excellent stability
• High temperature soldering:
260 °C/10 sec. at terminals
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
Case: JEDEC DO-219AB (SMF
®
) Plastic case
Weight: approx. 15 mg
Packaging codes/options:
GS18 / 10 k per 13 " reel, (8 mm tape), 50 k/box
GS08 / 3 k per 7 " reel, (8 mm tape), 30 k/box
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
1)
Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (≥ 40 µm thick)
2)
T
J
= 25 °C prior to surge
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
1)
Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (≥ 40 µm thick)
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Power dissipation T
L
= 80 °C P
tot
2.3 W
T
A
= 25 °C P
tot
0.8
1)
W
Non-repetitive peak pulse power
dissipation
100 µs square pulse
2)
P
ZSM
300 W
10/1000 µs waveform (BZD27-
C7V5P to BZD27-C100P)
2)
P
RSM
150 W
10/1000 µs waveform (BZD27-
C110P to BZD27-C200P)
2)
P
RSM
100 W
Parameter Test condition Symbol Value Unit
Thermal resistance junction to ambient air
1)
R
thJA
180 K/W
Thermal resistance junction to lead R
thJL
30 K/W
Maximum junction temperature T
j
150 °C
Storage temperature range T
S
- 55 to + 150 °C
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
F
= 0.2 A V
F
1.2 V
e3
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