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FDMA86551L 其他数据使用手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
分类:
MOS管
封装:
QFN-6
描述:
PowerTrench® N 通道 MOSFET，高达 9.9A，Fairchild Semiconductor### MOSFET 晶体管，Fairchild SemiconductorFairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (<250V) 类型。 先进的硅技术提供更小的芯片尺寸，其整合到多种工业标准和耐热增强型封装中。 Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。
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FDMA86551L数据手册
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October 2014
©2013 Fairchild Semiconductor Corporation
FDMA86551L Rev.C2
www.fairchildsemi.com
1
FDMA86551L Single N-Channel PowerTrench
®
MOSFET
FDMA86551L
Single N-Channel PowerTrench
®
MOSFET
60 V, 7.5 A, 23 mΩ
Features
Max r
DS(on)
= 23 mΩ at V
GS
= 10 V, I
D
= 7.5 A
Max r
DS(on)
= 35 mΩ at V
GS
= 4.5 V, I
D
= 6 A
Low Profile - 0.8 mm maximum in the new package MicroFET
2x2 mm
Free from halogenated compounds and antimony oxides
RoHS Compliant
General Description
This device has been designed to provide maximum efficiency
and thermal performance for synchronous buck converters. The
low rDS(on) and gate charge provide excellent switching
performance.
Application
DC – DC Buck Converters
D
D
S
G
D
D
Pin 1
Drain
Source
MicroFET 2X2 (Bottom View)
Bottom Drain Contact
D
D
D
D
S
G
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 60 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous T
A
= 25 °C (Note 1a) 7.5
A
-Pulsed (Note 4) 45
E
AS Single Pulse Avalanche Energy (Note 3) 37 mJ
P
D
Power Dissipation T
A
= 25 °C (Note 1a) 2.4
W
Power Dissipation T
A
= 25 °C (Note 1b) 0.9
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 52
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1b) 145
Device Marking Device Package Reel Size Tape Width Quantity
551 FDMA86551L MicroFET 2X2 7 ” 8 mm 3000 units
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