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FDMA86551L数据手册
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As used herein:
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intended for surgical implant into the body or (b) support or sustain
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Datasheet contains the design specifications for product development. Specifications may change
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Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
No Identification Needed Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Obsolete Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I73

FDMA86551L 数据手册

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FDMA86551 数据手册

Fairchild(飞兆/仙童)
PowerTrench® N 通道 MOSFET,高达 9.9A,Fairchild Semiconductor### MOSFET 晶体管,Fairchild SemiconductorFairchild 提供大量 MOSFET 设备组合,包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性,以减少结电容和反向恢复电荷,无需额外外部元件即可保持系统启动和运行更长时间。
ON Semiconductor(安森美)
PowerTrench® N 通道 MOSFET,高达 9.9A,Fairchild Semiconductor### MOSFET 晶体管,Fairchild SemiconductorFairchild 提供大量 MOSFET 设备组合,包括高电压 (>250V) 低电压 (<250V) 类型。 先进的硅技术提供更小的芯片尺寸,其整合到多种工业标准和耐热增强型封装中。 Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性,以减少结电容和反向恢复电荷,无需额外外部元件即可保持系统启动和运行更长时间。
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