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FDMA86551L 其他数据使用手册 - ON Semiconductor（安森美）
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ON Semiconductor（安森美）
分类:
MOS管
封装:
QFN-6
描述:
PowerTrench® N 通道 MOSFET，高达 9.9A，Fairchild Semiconductor### MOSFET 晶体管，Fairchild SemiconductorFairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (<250V) 类型。 先进的硅技术提供更小的芯片尺寸，其整合到多种工业标准和耐热增强型封装中。 Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。
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FDMA86551L数据手册
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FDMA86551L Single N-Channel PowerTrench
®
MOSFET
www.fairchildsemi.com
3
©2013 Fairchild Semiconductor Corporation
FDMA86551L Rev.C2
Typical Characteristics T
J
= 25 °C unless otherwise noted
Figure 1.
01234
0
9
18
27
36
45
V
GS
= 4 V
V
GS
= 3.5 V
V
GS
= 4.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
V
GS
= 3 V
V
GS
= 10 V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics Figure 2.
0 9 18 27 36 45
0
1
2
3
4
5
V
GS
= 4.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
, DRAIN CURRENT (A)
V
GS
= 4 V
V
GS
= 3.5 V
V
GS
= 10 V
V
GS
= 3 V
Normalized On-Resistance
vs Drain Current and Gate Voltage
Figure 3. Normalized On- Resistance
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
D
= 7.5 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
vs Junction Temperature
Figure 4.
246810
0
30
60
90
T
J
= 125
o
C
I
D
= 7.5 A
T
J
= 25
o
C
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
O n -R es is t an ce v s G at e to
Source Voltage
Figure 5. Transfer Characteristics
123456
0
9
18
27
36
45
T
J
= 150
o
C
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
T
J
= -55
o
C
T
J
= 25
o
C
I
D
, DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.00.20.40.60.81.01.2
0.001
0.01
0.1
1
10
45
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
S ou r ce to D ra in D io d e
Forward Voltage vs Source Current
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