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JANTXV1N5811US 其他数据使用手册 - Microsemi（美高森美）
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Microsemi（美高森美）
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JANTXV1N5811US数据手册
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MicroNote
Series 302
by Kent Walters, Corporate Applications Engineer
Rectifier
Reverse
Switching
Performance
Basic rectifier diode features were
described in MicroNote 301.
These included average forward
current I
O
, working peak reverse
voltage V
RWM
, reverse current I
R
,
breakdown voltage V
(BR)
, forward
voltage V
F
, forward current I
F
, and
forward surge current I
FSM
. For
many low frequency applications,
these parameters are adequate in
selecting rectifiers.
As switching speeds or frequency
of operation increase well beyond
400 Hz, rectifiers can become
inefficient or notably handicapped
to a variety of applications unless
designed and selected with added
performance features. This is most
often given in terms of reverse
recovery time t
rr
. Applications
may include switched mode power
supplies or others requiring high
speed rectifier response. In these
examples, rectifiers are often
expected to respond as ideal
switches or “one-way-current-flow
valves” to meet functional circuit
requirements when subjected to
forward and reverse voltage
environments. High speed
rectifiers best approach this ideal
by minimizing switching energy
losses and heat that can otherwise
be generated in other circuit
components and in switching
rectifiers themselves. In other
applications needing fast
responding “catch” diodes, they
also serve as protective voltage
clamps in parallel to sensitive
components such as MOSFETs
and IGBTs. In such applications,
good forward recovery
characteristics in t
fr
and V
FRM
may
also be needed.
The industry generally identifies a
rectifier as “fast” if it is rated with
reverse recovery of 500 ns or less
(≈ 1/10 that of standard rectifiers).
If further improved to 100 ns or
less, it is often termed “ultrafast”.
Low current small signal diodes
with 10-100 volt V
RWM
are in the t
rr
range of 0.75 to 5 ns. Medium to
high current ultrafast rectifiers are
available in a range of 15 to 60 ns
as voltage rating is increased from
50 to 800 volt V
RWM
operation.
Rectifiers with voltages of 1000 to
1500 volts are also available in the
range of 100 ns.
The reverse recovery time of a
rectifier can best be understood by
viewing the rate of decreasing
current in the forward conducting
direction and how quickly
thereafter it effectively stops
current flow. When switched in
this manner, the typical current
flow and voltage response of a
rectifier is shown in Figure 1.
When forward current is switched
or ramped down at some high rate
of di/dt to zero in Figure 1, current
flow does not simply come to an
ideal stop. Instead the current
briefly reverses its flow and
continues until a peak overshoot
occurs. It will then diminish
thereafter to near zero (I
R
). During
the brief reverse current flow, the
anticipated high reverse blocking
voltage across the rectifier does
not start appearing until the
reverse current peak occurs. This
delay can also significantly affect
the switching energy in other
components that must still support
voltage when rectifier current is
reversed.
As in most semiconductor
components, voltage response is
current driven. In rectifiers,
voltage versus time is dependent
on how long it takes for stored
charge in forward current injected
minority carriers near the pn
junction to be swept out or
recovered as current flow is
reversed. In Figure 1, this process
eventually peaks in charge removal
rate or the peak reverse recovery
current I
RM(REC)
before a depletion
region forms and the rectifier
begins supporting reverse voltage.
Figure 1. Typical Rectifier Response for Reverse Recovery
V
F
V
RM(REC)
V
R
I
F
t
rr
t
a
t
b
I
RM(REC)
I
R
0.10 I
RM(REC)
or
0.25 I
RM(REC)
di/dt
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