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BTS118D 数据手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
分类:
FET驱动器
封装:
TO-252-3
描述:
INFINEON BTS118D 智能电源开关, SIPMOS技术, 低压侧, 1路输出, 10V, 15A, TO-252-3
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BTS118D数据手册
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of 11 Go
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Datasheet 4 Rev. 1.3, 2006-12-22
Smart Low Side Power Switch
Power HITFET BTS 118D
Electrical Characteristics
Parameter
Symbol Values Unit
at T
j
= 25°C, unless otherwise specified min. typ. max.
Dynamic Characteristics
Turn-on time V
IN
to 90% I
D
:
R
L
= 4.7 W, V
IN
= 0 to 10 V, V
bb
= 12 V
t
on
- 40 100
µs
Turn-off time V
IN
to 10% I
D
:
R
L
= 4.7 W, V
IN
= 10 to 0 V, V
bb
= 12 V
t
off
- 70 100
Slew rate on 70 to 50% V
bb
:
R
L
= 4.7 W, V
IN
= 0 to 10 V, V
bb
= 12 V
-dV
DS
/dt
on
- 0.4 1.5
V/µs
Slew rate off 50 to 70% V
bb
:
R
L
= 4.7 W, V
IN
= 10 to 0 V, V
bb
= 12 V
dV
DS
/dt
off
- 0.6 1.5
Protection Functions
1)
Thermal overload trip temperature T
j
t
150 175 - °C
Thermal hysteresis
2)
DT
j
t
- 10 - K
Input current protection mode
T
j
= 150 °C
I
IN(Prot)
- 100 300 µA
Unclamped single pulse inductive energy
2)
I
D
= 2.2 A, T
j
= 25 °C, V
bb
= 12 V
E
AS
2 - - J
Inverse Diode
Inverse diode forward voltage
I
F
= 10.9 A, t
m
= 250 µs, V
IN
= 0 V,
t
P
= 300 µs
V
SD
- 1.0 1.5
V
1
Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2
not subject to production test, specified by design
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