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BZD27C51P-GS08 数据手册 - VISHAY（威世）
制造商:
VISHAY（威世）
分类:
齐纳二极管
封装:
DO-219AB
描述:
齐纳二极管与浪涌电流规格 Zener Diodes with Surge Current Specification
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BZD27C51P-GS08数据手册
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若手册格式错乱，请下载阅览PDF原文件
BZD27C3V6P to BZD27C200P
Vishay Semiconductors
Document Number 85810
Rev. 2.0, 15-Sep-10
www.vishay.com
4
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Typ. Diode Capacitance vs. Reverse Voltage
Figure 3. Power Dissipation vs. Ambient Temperature
0.1
1
10
0.6 0.8 1.0 1.2 1.4 1.6
17411
I
F
- Forward Current (A)
V
F
- Forward Voltage (V)
Max. V
F
Ty p. V
F
10
100
1000
10 000
0 0.5 1.0 1.5 2.0 2.5 3.0
17412
C
D
- Typ. Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
C5V1P
C6V8P
C12P
C27P
C51P
C200P
C18P
0
1.0
0.5
1.5
2.5
2.0
3.0
0 25 50 75 100 125 150
17413
P
tot
- Power Dissipation (W)
T
amb
- Ambient Temperature (°C)
Ambient temperature
Tie point temperature
Figure 4. Maximum Pulse Power Dissipation vs. Zener Voltage
Figure 5. Non-Repetitive Peak Reverse Current Pulse Definition
0
40
20
120
140
60
100
80
160
0 50 100 150 200
17414
P
RSM
- Max. Pulse Power Dissipation (W)
V
Znom
- Zener Voltage (V)
17415
t
I
RSM
(%)
100
90
50
10
t
1
t
1
= 10 µs
t
2
= 1000 µs
t
2
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