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FCH041N65F_F085 数据手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
分类:
MOS管
封装:
TO-247-3
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
FCH041N65F_F085数据手册
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of 11 Go
若手册格式错乱，请下载阅览PDF原文件
FCH041N65F_F085 N-Channel SuperFET II FRFET MOSFET
FCH041N65F_F085 Rev. B1 www.fairchildsemi.com3
Typical Characteristics
Figure 1. Normalized Power Dissipation vs. Case
Temperature
0 25 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
POWER DISSIPATION MULTIPLIER
T
C
, CASE TEMPERATURE(
o
C)
Figure 2. Maximum Continuous Drain Current vs.
Case Temperature
25 50 75 100 125 150
0
20
40
60
80
100
V
GS
= 10V
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE(
o
C)
Figure 3.
10
-5
10
-4
10
-3
10
-2
10
-1
0.01
0.1
1
SINGLE PULSE
D = 0.50
0.20
0.10
0.05
0.02
0.01
NORMALIZED THERMAL
IMPEDANCE, Z
θJC
t, RECTANGULAR PULSE DURATION(s)
DUTY CYCLE - DESCENDING ORDER
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
P
DM
t
1
t
2
Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
100
1000
10000
V
GS
= 10V
SINGLE PULSE
I
DM
, PEAK CURRENT (A)
t, RECTANGULAR PULSE DURATION(s)
T
C
= 25
o
C
I = I
2
150 - T
C
125
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
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