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FCH041N65F_F085 数据手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
分类:
MOS管
封装:
TO-247-3
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
FCH041N65F_F085数据手册
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of 11 Go
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FCH041N65F_F085 N-Channel SuperFET II FRFET MOSFET
FCH041N65F_F085 Rev. B1 www.fairchildsemi.com5
Figure 11.
-80 -40 0 40 80 120 160 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
I
D
= 38A
V
GS
= 10V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE(
o
C)
Normalized R
DSON
vs. Junction
Temperature
Figure 12. Normalized Gate Threshold Voltage vs.
Temperature
-80 -40 0 40 80 120 160 200
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
V
GS
= V
DS
I
D
= 250μA
NORMALIZED GATE
THRESHOLD VOLTAGE
T
J
, JUNCTION TEMPERATURE(
o
C)
Figure 13.
-75 -50 -25 0 25 50 75 100 125 150
0.90
0.95
1.00
1.05
1.10
I
D
= 10mA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
T
J
, JUNCTION TEMPERATURE (
o
C)
Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
Figure 14.
0.1 1 10 100 1000
1
10
100
1000
10000
100000
f = 1MHz
V
GS
= 0V
C
rss
C
oss
C
iss
CAPACITANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Capacitance vs. Drain to Source
Voltage
Figure 15.
0 40 80 120 160 200 240
0
2
4
6
8
10
V
DS
= 325V
V
DS
= 260V
ID = 38A
V
DS
= 390V
Q
g
, GATE CHARGE(nC)
V
GS
, GATE TO SOURCE VOLTAGE(V)
Gate Charge vs. Gate to Source
Voltage
Figure 16.
Typical Characteristics
0 132 264 396 528 660
0
10.8
21.6
32.4
43.2
54.0
E
OSS
, [μJ]
V
DS
, Drain to Source Voltage [V]
Figure 16. Eoss vs. Drain to Source
Voltage
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