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IKW50N65EH5
¥ 13.176
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  • 封装尺寸在P15
  • 标记信息在P2
  • 应用领域在P2
IKW50N65EH5数据手册
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IKW50N65EH5
Highspeedseriesfifthgeneration
Rev.2.1,2015-05-20
Highspeed5IGBTinTRENCHSTOP
TM
5technologycopackedwithfull-rated
RAPID1fastandsoftantiparalleldiode
FeaturesandBenefits:
HighspeedH5technologyoffering
•Best-in-Classefficiencyinhardswitchingandresonant
topologies
•PlugandplayreplacementofpreviousgenerationIGBTs
•650Vbreakdownvoltage
•LowgatechargeQ
G
•IGBTcopackedwithfull-ratedRAPID1fastandsoftantiparallel
diode
•Maximumjunctiontemperature175°C
•QualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications:
•Uninterruptiblepowersupplies
•Solarconverters
•Weldingconverters
•Midtohighrangeswitchingfrequencyconverters
Packagepindefinition:
•Pin1-gate
•Pin2&backside-collector
•Pin3-emitter
G
C
E
1
2
3
KeyPerformanceandPackageParameters
Type V
CE
I
C
V
CEsat
,T
vj
=25°C T
vjmax
Marking Package
IKW50N65EH5 650V 50A 1.65V 175°C K50EEH5 PG-TO247-3

IKW50N65EH5 数据手册

Infineon(英飞凌)
17 页 / 1.92 MByte
Infineon(英飞凌)
270 页 / 11.59 MByte
Infineon(英飞凌)
73 页 / 2.93 MByte
Infineon(英飞凌)
34 页 / 1.14 MByte
Infineon(英飞凌)
2 页 / 0.35 MByte

IKW50N65 数据手册

Infineon(英飞凌)
INFINEON  IKW50N65F5FKSA1  单晶体管, IGBT, 50 A, 1.6 V, 305 W, 650 V, TO-247, 3 引脚
Infineon(英飞凌)
INFINEON  IKW50N65H5FKSA1  单晶体管, IGBT, 50 A, 1.65 V, 305 W, 650 V, TO-247, 3 引脚
Infineon(英飞凌)
INFINEON  IKW50N65H5  单晶体管, IGBT, 50 A, 1.65 V, 305 W, 650 V, TO-247, 3 引脚
Infineon(英飞凌)
INFINEON  IKW50N65F5  单晶体管, IGBT, 50 A, 1.6 V, 305 W, 650 V, TO-247, 3 引脚
Infineon(英飞凌)
IGBT 晶体管 Trenchstop 5 IGBT
Infineon(英飞凌)
单晶体管, IGBT, 80 A, 1.35 V, 274 W, 650 V, TO-247, 3 引脚
Infineon(英飞凌)
Infineon(英飞凌)
单晶体管, IGBT, 80 A, 1.65 V, 275 W, 650 V, TO-247, 3 引脚
Infineon(英飞凌)
IGBT管/模块 IKW50N65WR5 TO-247-3
Infineon(英飞凌)
单 P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
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