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IKW50N65EH5 数据手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
封装:
TO-247-3
描述:
IGBT管/模块 IKW50N65EH5 TO-247-3
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
封装尺寸在P15
标记信息在P2
应用领域在P2
导航目录
IKW50N65EH5数据手册
Page:
of 17 Go
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4
IKW50N65EH5
Highspeedseriesfifthgeneration
Rev.2.1,2015-05-20
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter Symbol Value Unit
Collector-emittervoltage,T
vj
≥25°C V
CE
650 V
DCcollectorcurrent,limitedbyT
vjmax
T
C
=25°Cvaluelimitedbybondwire
T
C
=100°C
I
C
80.0
50.0
A
Pulsedcollectorcurrent,t
p
limitedbyT
vjmax
1)
I
Cpuls
200.0 A
Turn off safe operating area
V
CE
≤650V,T
vj
≤175°C,t
p
=1µs
1)
- 200.0 A
Diodeforwardcurrent,limitedbyT
vjmax
T
C
=25°Cvaluelimitedbybondwire
T
C
=100°C
I
F
80.0
50.0
A
Diodepulsedcurrent,t
p
limitedbyT
vjmax
1)
I
Fpuls
200.0 A
Gate-emitter voltage
TransientGate-emittervoltage(t
p
≤10µs,D<0.010)
V
GE
±20
±30
V
PowerdissipationT
C
=25°C
PowerdissipationT
C
=100°C
P
tot
275.0
138.0
W
Operating junction temperature T
vj
-40...+175 °C
Storage temperature T
stg
-55...+150 °C
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s 260
°C
Mounting torque, M3 screw
Maximum of mounting processes: 3
M 0.6 Nm
ThermalResistance
Parameter Symbol Conditions Max.Value Unit
Characteristic
IGBT thermal resistance,
junction - case
R
th(j-c)
0.55 K/W
Diode thermal resistance,
junction - case
R
th(j-c)
0.63 K/W
Thermal resistance
junction - ambient
R
th(j-a)
40 K/W
1)
Defined by design. Not subject to production test.
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