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IKW50N65EH5 数据手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
封装:
TO-247-3
描述:
IGBT管/模块 IKW50N65EH5 TO-247-3
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
封装尺寸在P15
标记信息在P2
应用领域在P2
导航目录
IKW50N65EH5数据手册
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of 17 Go
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5
IKW50N65EH5
Highspeedseriesfifthgeneration
Rev.2.1,2015-05-20
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
StaticCharacteristic
Collector-emitter breakdown voltage V
(BR)CES
V
GE
=0V,I
C
=0.20mA 650 - - V
Collector-emitter saturation voltage V
CEsat
V
GE
=15.0V,I
C
=50.0A
T
vj
=25°C
T
vj
=125°C
T
vj
=175°C
-
-
-
1.65
1.85
1.95
2.10
-
-
V
Diode forward voltage V
F
V
GE
=0V,I
F
=50.0A
T
vj
=25°C
T
vj
=125°C
T
vj
=175°C
-
-
-
1.35
1.33
1.30
1.70
-
-
V
Gate-emitter threshold voltage V
GE(th)
I
C
=0.50mA,V
CE
=V
GE
3.2 4.0 4.8 V
Zero gate voltage collector current I
CES
V
CE
=650V,V
GE
=0V
T
vj
=25°C
T
vj
=175°C
-
-
1.0
2000.0
50.0
-
µA
Gate-emitter leakage current I
GES
V
CE
=0V,V
GE
=20V - - 100 nA
Transconductance g
fs
V
CE
=20V,I
C
=50.0A - 62.0 - S
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
DynamicCharacteristic
Input capacitance C
ies
- 3000 -
Output capacitance C
oes
- 90 -
Reverse transfer capacitance C
res
- 12 -
V
CE
=25V,V
GE
=0V,f=1MHz pF
Gate charge Q
G
V
CC
=520V,I
C
=50.0A,
V
GE
=15V
- 120.0 - nC
Internal emitter inductance
measured 5mm (0.197 in.) from
case
L
E
- 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atT
vj
=25°C
Turn-on delay time t
d(on)
- 25 - ns
Rise time t
r
- 29 - ns
Turn-off delay time t
d(off)
- 172 - ns
Fall time t
f
- 35 - ns
Turn-on energy E
on
- 1.50 - mJ
Turn-off energy E
off
- 0.50 - mJ
Total switching energy E
ts
- 2.00 - mJ
T
vj
=25°C,
V
CC
=400V,I
C
=50.0A,
V
GE
=0.0/15.0V,
R
G(on)
=12.0Ω,R
G(off)
=12.0Ω,
Lσ=30nH,Cσ=25pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
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