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IKW50N65EH5 数据手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
封装:
TO-247-3
描述:
IGBT管/模块 IKW50N65EH5 TO-247-3
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
封装尺寸在P15
标记信息在P2
应用领域在P2
导航目录
IKW50N65EH5数据手册
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of 17 Go
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6
IKW50N65EH5
Highspeedseriesfifthgeneration
Rev.2.1,2015-05-20
Turn-on delay time t
d(on)
- 24 - ns
Rise time t
r
- 12 - ns
Turn-off delay time t
d(off)
- 173 - ns
Fall time t
f
- 15 - ns
Turn-on energy E
on
- 0.57 - mJ
Turn-off energy E
off
- 0.16 - mJ
Total switching energy E
ts
- 0.73 - mJ
T
vj
=25°C,
V
CC
=400V,I
C
=25.0A,
V
GE
=0.0/15.0V,
R
G(on)
=12.0Ω,R
G(off)
=12.0Ω,
Lσ=30nH,Cσ=25pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
DiodeCharacteristic,atT
vj
=25°C
Diode reverse recovery time t
rr
- 81 - ns
Diode reverse recovery charge Q
rr
- 1.10 - µC
Diode peak reverse recovery current I
rrm
- 17.0 - A
Diode peak rate of fall of reverse
recoverycurrentduringt
b
di
rr
/dt - -1000 - A/µs
T
vj
=25°C,
V
R
=400V,
I
F
=50.0A,
di
F
/dt=1000A/µs,
Lσ=30nH,
Cσ=25pF
Diode reverse recovery time t
rr
- 56 - ns
Diode reverse recovery charge Q
rr
- 0.70 - µC
Diode peak reverse recovery current I
rrm
- 19.7 - A
Diode peak rate of fall of reverse
recoverycurrentduringt
b
di
rr
/dt - -1500 - A/µs
T
vj
=25°C,
V
R
=400V,
I
F
=25.0A,
di
F
/dt=1000A/µs,
Lσ=30nH,
Cσ=25pF
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atT
vj
=150°C
Turn-on delay time t
d(on)
- 24 - ns
Rise time t
r
- 30 - ns
Turn-off delay time t
d(off)
- 190 - ns
Fall time t
f
- 30 - ns
Turn-on energy E
on
- 2.00 - mJ
Turn-off energy E
off
- 0.60 - mJ
Total switching energy E
ts
- 2.60 - mJ
T
vj
=150°C,
V
CC
=400V,I
C
=50.0A,
V
GE
=0.0/15.0V,
R
G(on)
=12.0Ω,R
G(off)
=12.0Ω,
Lσ=30nH,Cσ=25pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Turn-on delay time t
d(on)
- 23 - ns
Rise time t
r
- 14 - ns
Turn-off delay time t
d(off)
- 203 - ns
Fall time t
f
- 20 - ns
Turn-on energy E
on
- 0.95 - mJ
Turn-off energy E
off
- 0.25 - mJ
Total switching energy E
ts
- 1.20 - mJ
T
vj
=150°C,
V
CC
=400V,I
C
=25.0A,
V
GE
=0.0/15.0V,
R
G(on)
=12.0Ω,R
G(off)
=12.0Ω,
Lσ=30nH,Cσ=25pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
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