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IRFR3710Z 数据手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
封装:
DPAK-252
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IRFR3710Z数据手册
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IRFR/U3710ZPbF & IRFU3710Z-701PbF
2 2016-5-31
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11).
starting T
J
= 25°C, L = 0.28mH, R
G
= 25, I
AS
= 33A,V
GS
=10V. Part not recommended for use above this value.
Pulse width 1.0ms; duty cycle 2%.
C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population. 100% tested to this value in production.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994.
Refer to D-Pak package for Part Marking, Tape and Reel information
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 100 ––– ––– V V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– 0.088 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– 15 18
m
V
GS
= 10V, I
D
= 33A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V V
DS
= V
GS
, I
D
= 250µA
gfs Forward Trans conductance 39 ––– ––– S V
DS
= 25V, I
D
= 33A
I
DSS
Drain-to-Source Leakage Current
––– ––– 20
µA
V
DS
= 100V, V
GS
= 0V
––– ––– 250 V
DS
= 100V,V
GS
= 0V,T
J
=125°C
I
GSS
Gate-to-Source Forward Leakage ––– ––– 200
nA
V
GS
= 20V
Gate-to-Source Reverse Leakage ––– -200 V
GS
= -20V
Q
g
Total Gate Charge ––– 69 100
I
D
= 33A
Q
gs
Gate-to-Source Charge ––– 15 ––– V
DS
= 80V
Q
gd
Gate-to-Drain (‘Miller’) Charge ––– 25 –––
V
GS
= 10V
t
d(on)
Turn-On Delay Time ––– 14 –––
ns
V
DD
= 50V
t
r
Rise Time ––– 43 ––– I
D
= 33A
t
d(off)
Turn-Off Delay Time ––– 53 –––
R
G
= 6.8
t
f
Fall Time ––– 42 –––
V
GS
= 10V
L
D
Internal Drain Inductance ––– 4.5 –––
nH
Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 –––
from package
and center of die contact
C
iss
Input Capacitance ––– 2930 –––
V
GS
= 0V
C
oss
Output Capacitance ––– 290 ––– pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 180 –––
ƒ = 1.0MHz
C
oss
Output Capacitance ––– 1200 –––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
C
oss
Output Capacitance ––– 180 –––
V
GS
= 0V, V
DS
= 80V, ƒ = 1.0MHz
C
oss
eff.
Effective Output Capacitance ––– 430 –––
V
GS
= 0V, V
DS
= 0V to 80V
nC
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current
––– ––– 56
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– 220
integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C,I
S
= 33A,V
GS
= 0V
t
rr
Reverse Recovery Time ––– 35 53 ns
T
J
= 25°C ,I
F
= 33A, V
DS
= 50V
Q
rr
Reverse Recovery Charge ––– 41 62 nC
di/dt = 100A/µs
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
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