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STP8NM60 数据手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
MOS管
封装:
TO-220-3
描述:
N沟道650V TJMAX - 0.9ohm -8A TO- 220 / FP / D / IPAK / D2PAK的STripFET II MOSFET N-CHANNEL 650V Tjmax-0.9ohm-8A TO-220/FP/D/IPAK/D2PAK STripFET II MOSFET
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STP8NM60数据手册
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Electrical ratings STP8NM60, STD5NM60, STB8NM60
2/18
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220
D²PAK
TO-220FP
IPAK
DPAK
V
GS
Gate-source voltage ± 30 V
I
D
Drain current (continuous) at T
C
= 25 °C 8
8
(1)
1. Limited only by maximum temperature allowed
5A
I
D
Drain current (continuous) at T
C
=100 °C 5
5
(1)
3.1
(1)
A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 32
32
(1)
20
(1)
A
P
TOT
Total dissipation at T
C
= 25 °C 100 30 96 W
Derating factor 0.8 0.24 0.0.4 W/°C
dv/dt
(3)
3. I
SD
≤ 5 A, di/dt ≤ 400 A/µs, V
DD
= 80%V
(BR)DSS
Peak diode recovery voltage slope 15 V/ns
V
ISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;T
C
=25 °C)
-- 2500 -- V
T
J
T
stg
Operating junction temperature
Storage temperature
-55 to 150 °C
Table 2. Thermal resistance
Symbol Parameter
Value
Unit
TO-220
D²PAK
IPAK
DPAK
TO-220FP
R
thj-case
Thermal resistance junction-case max 1.25 1.3 4.16 °C/W
R
thj-a
Thermal resistance junction-ambient max 62.5 °C/W
T
l
Maximum lead temperature for soldering
purpose
300 °C
Table 3. Avalanche data
Symbol Parameter Value Unit
I
AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
2.5 A
E
AS
Single pulse avalanche energy
(starting Tj=25 °C, I
D
=I
AS
, V
DD
=50 V)
200 mJ
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