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STP8NM60 数据手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
MOS管
封装:
TO-220-3
描述:
N沟道650V TJMAX - 0.9ohm -8A TO- 220 / FP / D / IPAK / D2PAK的STripFET II MOSFET N-CHANNEL 650V Tjmax-0.9ohm-8A TO-220/FP/D/IPAK/D2PAK STripFET II MOSFET
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STP8NM60数据手册
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Electrical characteristics STP8NM60, STD5NM60, STB8NM60
4/18
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 300 V, I
D
= 2.5 A,
R
G
= 4.7 Ω, V
GS
=10 V
(see Figure 17)
14
10
23
10
ns
ns
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage rise time
Fall time
Cross-over time
V
DD
= 480 V, I
D
= 5 A,
R
G
= 4.7 Ω, V
GS
=10 V
7
10
17
ns
ns
ns
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
Source-drain current 8 A
I
SDM
(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) 32 A
V
SD
(2)
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
I
SD
= 5A, V
GS
=0
1.5 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 5 A, V
DD
=100 V
di/dt = 100 A/µs,
(see Figure 22)
300
1.95
13
ns
µC
A
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 5 A, V
DD
= 100 V
di/dt = 100 A/µs,
Tj=150 °C (see Figure 22)
445
3.00
13.5
ns
µC
A
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