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STP8NM60 数据手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
MOS管
封装:
TO-220-3
描述:
N沟道650V TJMAX - 0.9ohm -8A TO- 220 / FP / D / IPAK / D2PAK的STripFET II MOSFET N-CHANNEL 650V Tjmax-0.9ohm-8A TO-220/FP/D/IPAK/D2PAK STripFET II MOSFET
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STP8NM60数据手册
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STP8NM60, STD5NM60, STB8NM60 Electrical characteristics
3/18
2 Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 250 µA, V
GS
= 0
600 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= max rating,
V
DS
= max rating @125 °C
1
10
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±20 V
±100 nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
345V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10 V, I
D
= 2.5 A
0.9 1 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
Forward transconductance
V
DS
= I
D(on)
x R
DS(on)max
,
I
D
= 2.5 A
2.4 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25 V, f=1 MHz,
V
GS
=0
400
100
10
pF
pF
pF
C
oss eq
(1)
.
1. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
Equivalent output
capacitance
V
GS
=0, V
DS
=0 to 480 V
50 pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 400 V, I
D
= 5 A
V
GS
=10 V
(see Figure 12)
13
5
6
18 nC
nC
nC
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